vishay siliconix SUD50N02-06p document number: 71931 s11-2308-rev. d, 21-nov-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 20 v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? 175 c junction temperature ? pwm optimized for high efficiency ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? synchronous buck dc/dc conversion - desktop - server notes: a. surface mounted on fr4 board, t 10 s. b. limited by package. product summary v ds (v) r ds(on) ( ) i d (a) a 20 0.0060 at v gs = 10 v 26 0.0095 at v gs = 4.5 v 21 to-252 s gd top view drain connected to tab ordering information: SUD50N02-06p-e3 (lead (pb) free) n-channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 20 continuous drain current a t a = 25 c i d 26 a a t c = 25 c 50 b pulsed drain current i dm 100 continuous source current (diode conduction) a i s 26 avalanche current l = 0.1 mh i as 45 single pulse avalanche energy e as 101 mj maximum power dissipation t a = 25 c p d 6.8 a w t c = 25 c 65 operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 18 22 c/w steady state 40 50 maximum junction-to-case r thjc 1.9 2.3
www.vishay.com 2 document number: 71931 s11-2308-rev. d, 21-nov-11 vishay siliconix SUD50N02-06p this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (25 c unless noted) specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. a max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 20 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.8 3 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a v ds = 20 v, v gs = 0 v, t j = 125 c 50 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 50 a drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 20 a 0.0046 0.006 v gs = 10 v, i d = 20 a, t j = 125 c 0.0084 v gs = 4.5 v, i d = 20 a 0.0073 0.0095 forward transconductance b g fs v ds = 15 v, i d = 20 a 15 s dynamic a input capacitance c iss v gs = 0 v, v ds = 10 v, f = 1 mhz 2550 pf output capacitance c oss 900 reverse transfer capacitance c rss 415 total gate charge c q g v ds = 10 v, v gs = 4.5 v, i d = 50 a 19 30 nc gate-source charge c q gs 7.5 gate-drain charge c q gd 6 gate resistance r g 0.5 1.5 2.4 tu r n - o n d e l ay t i m e c t d(on) v dd = 10 v, r l = 0.2 i d ? 50 a, v gen = 10 v, r g = 2.5 11 20 ns rise time c t r 10 15 turn-off delay time c t d(off) 24 35 fall time c t f 915 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 50 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/s 35 70 ns output characteristics 0 20 40 60 80 100 120 140 160 0246810 v ds - drain-to-source voltage (v) i d - drain current (a) 2 v v gs = 10 thru 5 v 3 v 4 v transfer characteristics 0 20 40 60 8 0 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs i d - drain c u rrent (a) 25 c - 55 c t c = 125 c - gate-to-so u rce v oltage ( v )
document number: 71931 s11-2308-rev. d, 21-nov-11 www.vishay.com 3 vishay siliconix SUD50N02-06p this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c unless noted) transconductance capacitance on-resistance vs. junction temperature 0 20 40 60 8 0 100 0 1020304050 - transcond u ctance ( s ) g fs t c = - 55 c 25 c 125 c i d - drain c u rrent (a) 0 500 1000 1500 2000 2500 3000 3500 048121620 v ds - drain-to-source voltage (v) c - capacitance (pf) c rss c iss c oss ( n ormalized) - on-resistance r ds(on) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 175 t j v gs = 10 v i d = 30 a - j u nction temperat u re (c) on-resistance vs. drain current gate charge source-drain diode forward voltage 0.000 0.002 0.004 0.006 0.008 0.010 0 20406080100 i d - drain current (a) r ds(on) v gs = 10 v v gs = 4.5 v v gs = 6.3 v 0 2 4 6 8 10 0 8 16 24 32 40 - gate-to-source voltage (v ) q g - total gate charge (nc) v gs v ds = 10 v i d = 50 a v sd - so u rce c u rrent (a) i s 100 1 0.3 0.6 0.9 1.2 1.5 t j = 25 c t j = 150 c 0 10 - so u rce-to-drain v oltage ( v )
www.vishay.com 4 document number: 71931 s11-2308-rev. d, 21-nov-11 vishay siliconix SUD50N02-06p this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71931 . maximum drain current vs. ambient temperature 0 8 16 24 32 40 0 25 50 75 100 125 150 175 t a -am b ient temperat u re (c) - drain c u rrent (a) i d safe operating area v ds - drain c u rrent (a) i d 1000 10 0.01 0.1 1 10 100 1 100 t a = 25 c single p u lse 1 ms 10 ms 100 ms 100 s, dc 10, 100 s 1 s 0.1 10 s limited b y r ds(on) * - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified > normalized thermal transient im pedance, junction-to-ambient square wave pulse duration (s) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 110 normalized effective transient thermal impedance 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1000 100 normalized thermal transient impedance, junction-to-case 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 110 0.2 0.1 duty cycle = 0.5 100 square wave pulse duration (s) normalized effective transient thermal impedance 0.05 0.02 single pulse
package information www.vishay.com vishay siliconix revision: 03-jun-13 1 document number: 71197 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-252aa case outline notes ? dimension l3 is for reference only. ? xian, mingxin, and gem sh actual photo. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters inches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 4.10 - 0.161 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.01 1.52 0.040 0.060 ecn: t13-0359-rev. o, 03-jun-13 ? dwg: 5347
application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
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